Scaling of Silicon Phase-Change Oscillators

• Published in: IEEE electron device letters Vol. 32; no. 11; pp. 1486 - 1488
• Main Authors: Cywar, A., Dirisaglik, F., Akbulut, M., Bakan, G., Steen, S., Silva, H., Gokirmak, A.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Capacitance; Capacitors; Circuit properties; Conductivity; Devices; Dielectric, amorphous and glass solid devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Heating; Liquids; Mathematical models; Micro- and nanoelectromechanical devices (mems/nems); microelectromechanical devices; nanowires; Oscillations; Oscillators; Oscillators, resonators, synthetizers; phase change materials; Resistance; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Solid modeling; Three dimensional; Wires; oscillators; High strength current; Relaxation oscillators; Liquids; microelectromechanical devices; Scalability; Cooling rate; Oscillation frequency; Thermal behavior; phase change materials; Power supply; Power electronics; Numerical method; Finite element method; Silicon on insulator technology; Self heating; SPICE; Silicon; PCM material; Nanowires; Capacitor; Time constant; Resistor; Microelectromechanical device
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2164511

Scalability of silicon-based phase-change oscillators is investigated through experimental and computational studies. These relaxation oscillators are composed of a small volume of silicon, dc biased through a load resistor and a capacitor, which melts due to self-heating and resolidifies upon discharge of the load capacitor. These phase changes lead to high-amplitude current spikes with oscillation frequency that scales with supply voltage, RC time constant, power delivery condition, and heating and cooling rates of the wire. Experimental results are obtained from structures fabricated using silicon-on-insulator substrates. Scaling effects of various parameters are explored using 3-D finite-element simulations coupled with SPICE models.