Finite Element Simulation Of Laser-Induced Diffusion In Silicon

Laser-assisted diffusion of dopants is a promising way to realize selective emitter solar cells with a reduced number of technological steps. This paper discusses the simulation by finite element method of laser doping in order to optimise the fabrication process. A finite element method is used to...

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Bibliographic Details
Published inEnergy procedia Vol. 8; pp. 587 - 591
Main Authors Poulain, G., Blanc, D., Semmache, B., Pellegrin, Y., Lemiti, M.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2011
Subjects
dopant diffusion
finite element
Laser doping
phosphorus
selective emitter
silicon solar cell
dopant diffusion
finite element
selective emitter
silicon solar cell
Laser doping
phosphorus
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Summary:Laser-assisted diffusion of dopants is a promising way to realize selective emitter solar cells with a reduced number of technological steps. This paper discusses the simulation by finite element method of laser doping in order to optimise the fabrication process. A finite element method is used to solve the heat-transfer equation which describes the thermal effects and Fick's second law which describes the diffusion of dopants. The phosphosilicate glass (PSG) layer that is produced during the emitter formation on p-type silicon solar cells is used as the doping source during the laser-assisted diffusion process. The influence of laser parameters and material properties are studied. Modelling results are compared to SIMS measurements of the phosphorous doping profile. A structure is discussed in the perspective of a self-aligned process for selective emitter fabrication, where the PSG layer is present underneath the silicon nitride (SiNx) passivation layer.
ISSN:1876-6102
1876-6102
DOI:10.1016/j.egypro.2011.06.187