Nitride-Based Schottky Barrier Sensor Module With High Electrostatic Discharge Reliability

In this study, we proposed and realized a nitride-based Schottky barrier sensor module with high electrostatic discharge (ESD) reliability. By including a Si-based ESD protection chip into the module, we can significantly enhance endurable ESD voltages under both forward and reverse human-body-mode...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 19; no. 10; pp. 717 - 719
Main Authors Horng, J.J., Su, Y.K., Chang, S.J., Ko, T.K., Shei, S.C.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2007
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
AlGaN
Aluminum gallium nitride
Barriers
Chemical sensors
Conferences
Durability
Electrostatic discharge
electrostatic discharge (ESD)
Electrostatic discharges
Fiber optics
Gallium nitride
Light emitting diodes
Modules
MOSFETs
Optical fibers
Protection
protection chip
Schottky barriers
sensor module
Sensor phenomena and characterization
Stress
Stresses
ultraviolet (UV)
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Summary:In this study, we proposed and realized a nitride-based Schottky barrier sensor module with high electrostatic discharge (ESD) reliability. By including a Si-based ESD protection chip into the module, we can significantly enhance endurable ESD voltages under both forward and reverse human-body-mode (HBM) ESD stresses. It was found that the fabricated module can endure reverse HBM ESD stress of 7.5 KV and forward HBM ESD stress larger than 8 KV. It was also found that the inclusion of the Si-based ESD protection chip will not result in a decrease in detector responsivity
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ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2007.895056