Optimizing Inverse-Mode SiGe HBTs for Immunity to Heavy-Ion-Induced Single-Event Upset

• Published in: IEEE electron device letters Vol. 30; no. 5; pp. 511 - 513
• Main Authors: Appaswamy, A., Phillips, S., Cressler, J.D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Bipolar transistor logic devices; Communication systems; Cutoff frequency; Devices; Digital; Digital circuits; Electronics; Exact sciences and technology; Germanium silicon alloys; Heterojunction bipolar transistors; heterojunction bipolar transistors (HBTs); Immunity; Ionizing radiation; Logic devices; Microelectronic fabrication (materials and surfaces technology); nuclear radiation effects; Optimization; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon germanides; Silicon germanium; Single event upset; Space technology; Temperature distribution; Transistors; Performance evaluation; Semiconductor alloys; Bipolar transistor logic devices; Single event upset; Lithography; Heavy ion; Optimization; Bipolar transistor; Microelectronic fabrication; heterojunction bipolar transistors (HBTs); Collector; Radiation effect; Bipolar technology; Heterojunction bipolar transistors; nuclear radiation effects; Logic devices
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2009.2016678

Inverse-mode (collector-up) operation is proposed as a solution to the single-event-upset susceptibility observed in commercially available bulk silicon-germanium heterojunction bipolar transistors. Inverse-mode performance optimization techniques, which require no process changes or added lithographic masks, are demonstrated, yielding inverse-mode transistor performance capable of supporting gigabit-per-second digital logic needed in space-based communication systems.