How to achieve efficiencies exceeding 22% with multicrystalline n-type silicon solar cells
In this contribution, we demonstrate a route for efficiencies exceeding 22% with n-type multicrystalline (mc) silicon solar cells based on the TOPCon cell concept featuring a boron-diffused front side emitter and a full-area passivating rear contact. By applying a “high-performance” (HP) crystalliza...
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Published in | Energy procedia Vol. 124; pp. 777 - 780 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.09.2017
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Subjects | |
Online Access | Get full text |
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Summary: | In this contribution, we demonstrate a route for efficiencies exceeding 22% with n-type multicrystalline (mc) silicon solar cells based on the TOPCon cell concept featuring a boron-diffused front side emitter and a full-area passivating rear contact. By applying a “high-performance” (HP) crystallization process with an adapted seed structure in order to obtain an optimized grain boundary area fraction, we reduce recombination losses in the HP mc-Si material to a minimum. We discuss the electrical properties of the optimized n-type HP mc-Si, which features very low material-related efficiency losses of approximately 0.5%abs and, thus, enables an efficiency potential of 22.6% with regard to a cell limit of 23.1% of the TOPCon cell concept adapted for multicrystalline silicon. Results at the device level reveal a record efficiency of 21.9%, which is the highest efficiency reported for a multicrystalline silicon solar cell. Finally, we discuss the deviations between the predicted efficiency potential and the solar cell results. |
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ISSN: | 1876-6102 1876-6102 |
DOI: | 10.1016/j.egypro.2017.09.086 |