Characteristics of silicon wafer-bond strengthening by annealing

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 139; no. 9; pp. 2589 - 2594
Main Authors HORIUCHI, M, AOKI, S
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 1992
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Non metal
Strengthening
Semiconductor materials
Solid solid interface
Roughness
Silicon IV Oxides
Experimental study
Inorganic compound
Transport process
Wafer bonding
Scanning tunneling microscopy
Transmission electron microscopy
Morphology
Models
Silicon
Thermal annealing
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.2221269