Structure and dielectric behavior of TlSbS2

• Published in: Applied physics. A, Materials science & processing Vol. 112; no. 4; pp. 911 - 918
• Main Authors: Parto, M., Deger, D., Ulutas, K., Yakut, Ş.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.09.2013; Springer
• Subjects: Capacitance; Characterization and Evaluation of Materials; Condensed Matter Physics; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric constant; Dielectric loss; Dielectric loss and relaxation; Dielectric properties of solids and liquids; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Growth from melts; zone melting and refining; Hopping (conductivity); Machines; Manufacturing; Materials science; Mathematical models; Methods of crystal growth; physics of crystal growth; Nanotechnology; Optical and Electronic Materials; Permittivity (dielectric function); Physics; Physics and Astronomy; Processes; Surfaces and Interfaces; TCP (protocol); Thin Films; Dielectric Constant; Quantum Mechanical Tunneling; Dielectric Loss Factor; Dielectric Loss; Temperature Dependent Behavior; Potential barrier; Electrical conductivity; Dielectric materials; Dielectric properties; Layer thickness; Thin films; Calcium nitride; Temperature effects; Dielectric losses; Bulk properties; Capacitance; Barrier height; Permittivity; Vacuum evaporation; Bridgman method
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-012-7446-9

A comparison of structure and dielectric properties of TlSbS 2 thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of TlSbS 2 crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of TlSbS 2 are presented. Dielectric constant ε 1 and dielectric loss ε 2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of TlSbS 2 thin films is ε 1 =1.8–6 and the dielectric loss of TlSbS 2 thin films is ε 2 =0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height W m is calculated from the dielectric measurements. The values of W m for TlSbS 2 films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ω s law with a temperature dependent s ( s <1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of TlSbS 2 .