Investigation of gate-bias stress and hot-carrier stress-induced instability of InGaZnO thin-film transistors under different environments
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Published in | Surface & coatings technology Vol. 231; pp. 478 - 481 |
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Main Authors | , , , , , , , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
Amsterdam
Elsevier
01.09.2013
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Subjects | |
Online Access | Get full text |
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ISSN: | 0257-8972 1879-3347 |
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DOI: | 10.1016/j.surfcoat.2012.10.030 |