Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
Anodic aluminum oxide (AAO) films with different porosities were fabricated on the surfaces of InGaN/GaN multiple quantum wells (MQWs). We measured the photoluminescence spectra of these samples and then calculated the light extraction enhancement factors ( E ). It was found that the light extractio...
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Published in | Applied physics. A, Materials science & processing Vol. 110; no. 1; pp. 35 - 39 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Berlin/Heidelberg
Springer-Verlag
2013
Springer |
Subjects | |
Online Access | Get full text |
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Summary: | Anodic aluminum oxide (AAO) films with different porosities were fabricated on the surfaces of InGaN/GaN multiple quantum wells (MQWs). We measured the photoluminescence spectra of these samples and then calculated the light extraction enhancement factors (
E
). It was found that the light extraction of the MQWs with the AAO films has been greatly enhanced compared to the area without AAO coverage. The maximum value of
E
reaches 3.5 at a certain wavelength and 2.29 in the integral intensity. The increase of
E
with the decrease of the porosities demonstrates that the nano-hole structure in the AAO films plays an important role in enhancing the light extraction efficiency. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-012-7410-8 |