A novel pull-up type RF MEMS switch with low actuation voltage

• Published in: IEEE microwave and wireless components letters Vol. 15; no. 12; pp. 856 - 858
• Main Authors: Seong-Dae Lee, Byoung-Chul Jun, Kim, S.-D., Jin-Koo Rhee
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.2005; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Contacts; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Electrostatic measurements; Exact sciences and technology; High isolation; Insertion loss; low actuation voltage; Low voltage; Micro- and nanoelectromechanical devices (mems/nems); microelectromechanical system (MEMS) switch; Microelectromechanical systems; Micromechanical devices; Microswitches; pull-up; Radio frequency; Radiofrequency microelectromechanical systems; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switches; Switching, multiplexing, switched capacity circuits; Radio wave; High isolation; Return loss; pull-up; Elastic deformation; Radiofrequency; RF systems; Switching; Cantilever beam; Low voltage; Contact stress; Insertion loss; Selector switch; microelectromechanical system (MEMS) switch; Microelectromechanical device; low actuation voltage
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2005.860006

We report a novel pull-up type radio frequency (RF) microelectromechanical system (MEMS) switch with no elastic deformation of the cantilever involved in the actuation. At a voltage of 4.5V, reliable actuations are achieved such that the movable lower contact pad is pulled up by the electrostatic force to make contact with the upper pad. At a frequency of 50GHz, an insertion loss of 0.5dB, a return loss of 12.4dB, and an isolation of 55dB are obtained from the switch. The measured transient times for switch-on and switch-off are 120 and 130ns, respectively. Compared to the MEMS switches reported thus far, the pull-up type switch shows the best switching speed and isolation characteristic at 50GHz.