Scattering rates for holes near the valence-band edge in semiconductors

• Published in: Journal of applied physics Vol. 67; no. 12; pp. 7373 - 7382
• Main Authors: BRUDEVOLL, T, FJELDLY, T. A, BAEK, J, SHUR, M. S
• Format: Journal Article
• Language: English
• Published: Woodbury, NY American Institute of Physics 15.06.1990
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Physics; Kinetic model; Monte Carlo method; Deformation potential; Hole; Charge carrier scattering; Impurity; Theoretical study; Optical phonon
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.344524

In this paper, we discuss and compare the rates for dominant scattering mechanisms for holes in semiconductors, including ionized impurity scattering, polar and nonpolar optical-phonon scattering, and inelastic acoustic deformation potential scattering. The scattering rates for these mechanisms have been reviewed for the purpose of finding reliable expressions to be used in Monte Carlo simulation of hole transport in p-type III-V semiconductor devices. In the scarce literature on hole scattering rates, we have found several discrepancies. Here, we present corrected rates for ionized impurity scattering and for scattering by polar optical phonons. In addition, we have derived new expressions for the inelastic acoustic deformation potential scattering rates where we also have included a series expansion for the phonon occupation number, beyond the equipartition approximation.