Dual-wavelength AlInGaAs-InP grating-outcoupled surface-emitting laser with an integrated two-dimensional photonic lattice outcoupler

Grating-outcoupled surface-emitting semiconductor lasers emitting two independent wavelengths separated by 9.5 nm from a common aperture in a monolithic crossed configuration is demonstrated. This configuration provides integrated wavelength multiplexing at /spl sim/1300 nm from a single aperture in...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 17; no. 2; pp. 270 - 272
Main Authors Roh, S.D., Patterson, S.G., Amarasinghe, N.V., Masood, T., Castillega, J., McWilliams, S., Phan, D., Lee, D., Kirk, J.B., Evans, G.A.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.02.2005
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Apertures
Bragg gratings
Cost engineering
Distributed Bragg reflector (DBR) lasers
Distributed Bragg reflectors
Distributed feedback devices
Fiber lasers
gratings
Laser feedback
Laser modes
Lattices
Optical surface waves
outcouplers
Packaging
photonic lattice
Photonics
Semiconductor lasers
Surface emitting lasers
Wavelength multiplexing
Wavelengths
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Summary:Grating-outcoupled surface-emitting semiconductor lasers emitting two independent wavelengths separated by 9.5 nm from a common aperture in a monolithic crossed configuration is demonstrated. This configuration provides integrated wavelength multiplexing at /spl sim/1300 nm from a single aperture into a single fiber, simplifying packaging and reducing cost.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.839023