Molecular beam epitaxy of (Ga,Mn)N

We have successfully prepared wurtzite (Ga,Mn)N epitaxial layers using RF-plasma-assisted molecular beam epitaxy. Highly resistive (Ga,Mn)N epilayers show primarily paramagnetic behavior. The results of compositional, electronic and magnetic characterizations on the epilayers suggest that 60% of Mn...

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Bibliographic Details
Published inJournal of crystal growth Vol. 237; pp. 1353 - 1357
Main Authors Kondo, T., Kuwabara, S., Owa, H., Munekata, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2002
Subjects
A3. Molecular beam epitaxy
B1. Nitrides
B2. Magnetic materials
B2. Semiconducting III–V materials
71.55.Eq
A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting III–V materials
B2. Magnetic materials
75.50.Pp
75.70.Ak
81.15.Hi
81.05.Ea
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Summary:We have successfully prepared wurtzite (Ga,Mn)N epitaxial layers using RF-plasma-assisted molecular beam epitaxy. Highly resistive (Ga,Mn)N epilayers show primarily paramagnetic behavior. The results of compositional, electronic and magnetic characterizations on the epilayers suggest that 60% of Mn content in the epilayers substitute for Ga on sub-lattice sites. For epilayers with very high Mn concentrations (∼10 21 cm −3), Curie–Weiss analysis has revealed the effective spin number S≈2.5 together with the positive paramagnetic Curie temperatures. This suggests the presence of ferromagnetic spin exchange between Mn ions.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)02182-0