Low-temperature annealing of As-implanted Ge

• Published in: Journal of applied physics Vol. 63; no. 1; pp. 68 - 74
• Main Authors: HATTANGADY, S. V, FOUNTAIN, G. G, NICOLLIAN, E. H, MARKUNAS, R. J
• Format: Journal Article
• Language: English
• Published: Woodbury, NY American Institute of Physics 1988
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Physics; Structure of solids and liquids; crystallography; Non metal; Ion implantation; Annealing; Temperature; Impurity density; Charge carrier mobility; Thermal cycle; Hall effect; Experimental study; Arsenic Atomic ions; Radiation dose; Germanium; Charge carrier concentration; Diffusion; Thermal annealing; Concentration distribution
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.340464

Furnace annealing (FA) and rapid thermal anealing (RTA) of As75-implanted Ge is studied and contrasted. Activation has been observed in furnace-annealed samples at 500 °C. Rapid thermally annealed samples show activation at 575 °C and thereafter. Diffusion effects are significant during FA above 575 °C, while RTA is accompanied with very little dopant diffusion. Damage annealing is best in the FA samples as indicated by the mobility profiles. A dual process such as a 430 °C-FA/650 °C-RTA offers best results for activation, especially in the case of low-dose implants (∼97%). Carrier concentration profiles resemble theoretical implant profiles except near the surface where a region of high concentration is observed.