Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals

• Published in: Applied physics. A, Materials science & processing Vol. 113; no. 1; pp. 75 - 82
• Main Authors: Zhang, Qiubo, Wei, Wensheng
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.10.2013; Springer
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Condensed Matter Physics; Conversion; Cross-disciplinary physics: materials science; rheology; Energy; Exact sciences and technology; Machines; Manufacturing; Materials science; Nanoscale materials and structures: fabrication and characterization; Nanotechnology; Natural energy; Optical and Electronic Materials; Photovoltaic conversion; Physics; Physics and Astronomy; Processes; Quantum dots; Solar cells. Photoelectrochemical cells; Solar energy; Surfaces and Interfaces; Thin Films; Photoelectric Conversion; Open Circuit Voltage; Energy Band Structure; Valence Band; Short Circuit Current Density; Ternary compound; Gallium Nitrides; Quantum dot; Supracrystal; Short circuit currents; Gallium nitride; Energy level; Schrödinger equation; Solar cell; Array; Photoelectric effect; Indium Nitrides; Indium nitride
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-013-7826-9

In this paper, an intermediate-band solar cell (IBSC) with only one IB was designed, where the three-dimensional In x Ga 1− x N/InN quantum dot supracrystals were regularly arrayed in the i layer of the p-i-n type structural cell. IB characteristics such as position and width derived from discrete quantized energy levels in quantum dots were determined via solving the Schrödinger equation with the Kronig-Penny model. The principle of detailed balance was used to deal with the photoelectric conversion process in the IBSC. Characteristic parameters of the cell such as open circuit voltage, short circuit current density, and photoelectric conversion efficiency were numerically calculated. The influence of In content, average size of QDs, and interdot spacing on the cell performance was further analyzed.