The effects of surface-plasma treatment of thin-film hydrogen silesquioxane low k dielectric

• Published in: Journal of materials science. Materials in electronics Vol. 15; no. 3; pp. 139 - 143
• Main Authors: CHEN, Chi-Tong, CHIOU, Bi-Shiou
• Format: Journal Article
• Language: English
• Published: Norwell, MA Springer 01.03.2004; Springer Nature B.V
• Subjects: Applied sciences; Bombardment; Curing; Design. Technologies. Operation analysis. Testing; Dielectric constant; Electronics; Exact sciences and technology; Fourier transforms; Insulators; Integrated circuits; Materials science; Moisture; Networks; Plasma; Residual stress; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Water; Fourier transformation; Silsesquioxane polymer; Dielectric materials; Hydrogen; Refraction index; Plasma assisted processing; Network architecture; Surface treatment; Thin film; Surface effect; Infrared spectrometry; Hardening; ULSI circuit; Interconnection; Integrated circuit; Silicon; Permittivity; Residual stress; Low k dielectric
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1023/B:JMSE.0000011352.95343.8d

Hydrogen silesquioxane (HSQ) is a low dielectric constant material and a potential substitute for conventional silicon dioxide insulator in ULSI system. In this study, the effect of plasma treatment on HSQ films is investigated. The bond structure changes of HSQ after curing, plasma treatment, and water absorption were observed with Fourier transform infrared spectroscopy. Densification of the film occurs after curing, the higher the curing temperature, the lower the dielectric constant and refractive index of the film. Both H^sub 2^- and O^sub 2^-plasma treatments are employed in this study. The H^sub 2^-plasma bombardment enhances the formation of the network structure but raises the moisture absorption of HSQ films. It is found that films subjected to both H^sub 2^- and O^sub 2^-plasma treatments have lower dielectric constant than those subjected to O^sub 2^ treatment alone. Possible mechanisms for the effects of plasma treatments are explored. The residual stress of HSQ film is also studied.[PUBLICATION ABSTRACT]