Electroluminescence from Au/(SiO2 /Si/SiO2) nanometer double barrier/p-Si structures and its mechanism

Saved in:
Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 13; no. 50; pp. 11751 - 11761
Main Authors Qin, G G, Chen, Y, Ran, G Z, Zhang, B R, Wang, S H, Qin, G, Ma, Z C, Zong, W H, Ren, S F
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 17.12.2001
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electroluminescence
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Optical properties of specific thin films, surfaces, and low-dimensional structures
Other luminescence and radiative recombination
Physics
Thickness
Gold
Line shape
Charge carrier recombination
Silicon oxides
Double barrier structure
Oscillations
Electroluminescence
Silicon
Nanostructures
Experimental study
Diodes
Online AccessGet full text

Cover

More Information
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/13/50/335