Thermal Stability Improvement of Vertical Conducting Green Resonant-Cavity Light-Emitting Diodes on Copper Substrates

• Published in: IEEE photonics technology letters Vol. 20; no. 10; pp. 797 - 799
• Main Authors: Huang, S.Y., Horng, R.H., Liu, P.L., Wu, J.Y., Wu, H.W., Wuu, D.S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 15.05.2008; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum; Copper; Dielectric substrates; DIODES; Dissipation; Distributed Bragg reflectors; Electroluminescence; HEAT SINKS; InGaN; junction temperature; laser lift-off (LLO); Light emitting diodes; Mirrors; Photonics; PLATING; Quantum well devices; Resonance; resonant-cavity light-emitting diode (RCLED); Thermal conductivity; THERMAL STABILITY; TITANIUM DIOXIDE
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2008.921120

Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO-SiO distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.