Long SiC nanowires synthesized from off-gases of the polycarbosilane-derived SiC preparation

• Published in: Applied physics. A, Materials science & processing Vol. 98; no. 2; pp. 293 - 298
• Main Authors: Li, Gong-Yi, Li, Xiao-Dong, Wang, Hao, Liu, Lin
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer-Verlag 01.02.2010; Springer
• Subjects: Catalysts; Characterization and Evaluation of Materials; Chemical synthesis methods; Condensed Matter Physics; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Machines; Manufacturing; Materials science; Methods of nanofabrication; Nanoscale materials and structures: fabrication and characterization; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Nanotechnology; Nanowires; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Quantum wires; Silicon carbide; Single crystals; Structure of solids and liquids; crystallography; Surfaces and Interfaces; Thin Films; 81.10.Bk; 81.16.Be; 62.23.Hj; 61.46.Km; 81.05.Hd; Scanning electron microscopy; Particle size; Catalysts; Operating mode; VLS growth; XRD; SAED; Dispersive spectrometry; Optical microscopy; Monocrystals; Silicon carbide; Transmission electron microscopy; Nanowires; Chemical synthesis; Nanomaterial synthesis
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-009-5426-5

In this communication, we report on the attempt to make full use of the off-gases from polycarbosilane-derived SiC preparation, and we successfully synthesized long SiC nanowires in large areas with Fe(NO 3 ) 3 as catalyst. The nanowires have diameters of about 80–300 nm and lengths of millimeters, and they are identified as single crystals β -SiC along the 〈111〉 direction. The VLS mechanism was employed to interpret the nanowire growth.