Direct gap photoluminescence of n -type tensile-strained Ge-on-Si

Room temperature direct gap photoluminescence (PL) was observed from n -type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n -type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases wit...

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Bibliographic Details
Published inApplied physics letters Vol. 95; no. 1; pp. 011911 - 011911-3
Main Authors Sun, Xiaochen, Liu, Jifeng, Kimerling, Lionel C., Michel, Jurgen
Format Journal Article
LanguageEnglish
Published American Institute of Physics 06.07.2009
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Summary:Room temperature direct gap photoluminescence (PL) was observed from n -type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n -type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with temperature due to thermal excitation of electrons into the direct Γ valley, exhibiting robustness to heating effects. These unique properties of direct gap emission in an indirect gap material agree with our theoretical model and make Ge a promising light emitting material in 1550 nm communication band.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3170870