Reverse recovery characteristics and defect distribution in an electron-irradiated silicon p–n junction diode

Electron irradiation was performed to enhance the switching speed and thereby to reduce the energy loss of a p–n junction diode. The reverse recovery time decreased significantly but other electrical deterioration such as leakage current and on-stage voltage drop due to the electron irradiation was...

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Bibliographic Details
Published inMaterials chemistry and physics Vol. 84; no. 1; pp. 187 - 191
Main Authors Kang, S.M, Eom, T.J, Kim, S.J, Kim, H.W, Cho, J.Y, Lee, Chongmu
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.03.2004
Subjects
Defects
Electron irradiation
Energy loss
Minority carrier lifetime
Power device
Switching speed
Power device
Energy loss
Minority carrier lifetime
Electron irradiation
Switching speed
Defects
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Summary:Electron irradiation was performed to enhance the switching speed and thereby to reduce the energy loss of a p–n junction diode. The reverse recovery time decreased significantly but other electrical deterioration such as leakage current and on-stage voltage drop due to the electron irradiation was found not to be much. Also the defect distribution and the type of the electron irradiation-induced defects are discussed based on the deep level transient spectroscopy (DLTS) analysis results and the secondary ion mass spectrometry (SIMS) depth profiles of the silicon substrate.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2003.11.030