Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd 2 O 3 hysteresis phenomenon. The current-voltage varied with Gd 2 O 3 thickness and a charged capacitance voltage ( C - V ) curve with a left shift is also observed in experimental results. The...

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Published inJournal of applied physics Vol. 98; no. 7; pp. 076110 - 076110-3
Main Authors Hsieh, Li-Zen, Ko, Hong-Hsi, Kuei, Ping-Yu, Chang, Liann-Be, Jeng, Ming-Jer
Format Journal Article
LanguageEnglish
Published American Institute of Physics 01.10.2005
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Summary:This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd 2 O 3 hysteresis phenomenon. The current-voltage varied with Gd 2 O 3 thickness and a charged capacitance voltage ( C - V ) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C - V hysteresis gaps decrease with increasing oxidation time.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2084333