Velocity-field dependence in GaAs

We show that the shape of the velocity versus electric-field curves in GaAs is closely related to the value of the low-field mobility. We propose a simple empirical relation that interpolates the V(F) curves in a wide range of the low-field mobilities and demonstrate that this interpolation is in a...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 34; no. 8; pp. 1831 - 1832
Main Authors Jingming Xu, Shur, M.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.08.1987
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Gallium Arsenides
Semiconductor device
Simulation
Solid state device
Charge carrier mobility
Empirical method
Low field
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Summary:We show that the shape of the velocity versus electric-field curves in GaAs is closely related to the value of the low-field mobility. We propose a simple empirical relation that interpolates the V(F) curves in a wide range of the low-field mobilities and demonstrate that this interpolation is in a very good agreement with experimental data and Monte Carlo results.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.23158