Switching dynamics in titanium dioxide memristive devices

• Published in: Journal of applied physics Vol. 106; no. 7; pp. 074508 - 074508-6
• Main Authors: Pickett, Matthew D., Strukov, Dmitri B., Borghetti, Julien L., Yang, J. Joshua, Snider, Gregory S., Stewart, Duncan R., Williams, R. Stanley
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 01.10.2009

Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches based on metal oxides such as Ti O 2 have been identified as memristive devices primarily based on th...