Switching dynamics in titanium dioxide memristive devices

• Published in: Journal of applied physics Vol. 106; no. 7; pp. 074508 - 074508-6
• Main Authors: Pickett, Matthew D., Strukov, Dmitri B., Borghetti, Julien L., Yang, J. Joshua, Snider, Gregory S., Stewart, Duncan R., Williams, R. Stanley
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 01.10.2009
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.3236506

Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches based on metal oxides such as Ti O 2 have been identified as memristive devices primarily based on the "pinched hysteresis loop" that is observed in their current-voltage ( i - v ) characteristics. Here we show that the mathematical definition of a memristive device provides the framework for understanding the physical processes involved in bipolar switching and also yields formulas that can be used to compute and predict important electrical and dynamical properties of the device. We applied an electrical characterization and state-evolution procedure in order to capture the switching dynamics of a device and correlate the response with models for the drift diffusion of ionized dopants (vacancies) in the oxide film. The analysis revealed a notable property of nonlinear memristors: the energy required to switch a metal-oxide device decreases exponentially with increasing applied current.