Strong second-harmonic generation in silicon nitride films

We observe strong second-harmonic generation from silicon nitride films prepared on fused silica substrates by plasma enhanced chemical vapor deposition. The components of the second-order nonlinear optical susceptibility tensor of the films are calibrated against quartz crystal. The dominant compon...

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Bibliographic Details
Published inApplied physics letters Vol. 100; no. 16; pp. 161902 - 161902-4
Main Authors Ning, Tingyin, Pietarinen, Henna, Hyvärinen, Outi, Simonen, Janne, Genty, Goëry, Kauranen, Martti
Format Journal Article
LanguageEnglish
Published American Institute of Physics 16.04.2012
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Summary:We observe strong second-harmonic generation from silicon nitride films prepared on fused silica substrates by plasma enhanced chemical vapor deposition. The components of the second-order nonlinear optical susceptibility tensor of the films are calibrated against quartz crystal. The dominant component has the magnitude of 2.5pm/V, almost two orders of magnitude larger than reported for Si 3 N 4 , and about three times larger than for the traditional nonlinear crystal of potassium dihydrogen phosphate. The results indicate that silicon nitride has great potential for second-order nonlinear optical devices, especially in on-chip nanophotonics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4704159