Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

• Published in: IEEE transactions on electron devices Vol. 34; no. 8; pp. 1650 - 1657
• Main Authors: Baek, J., Shur, M.S., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.1987; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Exact sciences and technology; Other techniques and industries

We present the results of theoretical and experimental studies of heterostructure insulated-gate field-effect transistors (HIG' FET's). We develop an improved charge-control model for the two-dimensional densities of electronand hole gases at the heterointerface. Our model provides an accu...