Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

We present the results of theoretical and experimental studies of heterostructure insulated-gate field-effect transistors (HIG' FET's). We develop an improved charge-control model for the two-dimensional densities of electronand hole gases at the heterointerface. Our model provides an accu...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 34; no. 8; pp. 1650 - 1657
Main Authors Baek, J., Shur, M.S., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.08.1987
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Exact sciences and technology
Other techniques and industries
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Summary:We present the results of theoretical and experimental studies of heterostructure insulated-gate field-effect transistors (HIG' FET's). We develop an improved charge-control model for the two-dimensional densities of electronand hole gases at the heterointerface. Our model provides an accurate description of the device behavior even at relatively low densities of two-dimensional gases. We obtain the current-voltage characteristics of HIGFET's using our charge-control model and account for the gate current. The theoretical calculations are in good agreement with the experimental measurements.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.23133