Binding and transition energies of shallow impurities in cylindrical GaAs quantum-well wires under a uniform magnetic field

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Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 10; no. 47; pp. 10599 - 10612
Main Authors Villamil, Pablo, Porras-Montenegro, N
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 30.11.1998
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Impurity and defect levels; energy states of adsorbed species
Physics
Surface and interface electron states
Quantum wires
Gallium arsenides
Semiconductor materials
Variational methods
Transition energy
Binding energy
Magnetic field effects
Theoretical study
Shallow impurities
Effective mass model
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ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/10/47/011