Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes

Results are presented for ZnO-based ultraviolet light emitting diodes (LEDs) that employ a BeZnO∕ZnO active layer comprised of seven quantum wells. Arsenic and gallium are used for p-type and n-type layers. The ZnO-based LEDs show two dominant electroluminescence peaks located in the ultraviolet spe...

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Published inApplied Physics Letters Vol. 88; no. 24; pp. 241108 - 241108-3
Main Authors Ryu, Yungryel, Lee, Tae-Seok, Lubguban, Jorge A., White, Henry W., Kim, Bong-Jin, Park, Yoon-Soo, Youn, Chang-Joo
Format Journal Article
LanguageJapanese
English
Published AIP Publishing 12.06.2006
American Institute of Physics
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Summary:Results are presented for ZnO-based ultraviolet light emitting diodes (LEDs) that employ a BeZnO∕ZnO active layer comprised of seven quantum wells. Arsenic and gallium are used for p-type and n-type layers. The ZnO-based LEDs show two dominant electroluminescence peaks located in the ultraviolet spectral region between 360 and 390nm, as well as a broad peak at 550nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2210452