Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride

A mechanism of transverse charge transfer through hexagonal boron nitride (h-BN) in a MIS structure has been studied. Experimental data for charge transfer have been analyzed in terms of different models of charge transfer in insulators. It has been shown that charge transfer in h-BN is described by...

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Published inJournal of experimental and theoretical physics Vol. 136; no. 3; pp. 345 - 352
Main Authors Islamov, D. R., Perevalov, T. V., Gismatulin, A. A., Azarov, I. A., Spesivtsev, E. V., Gritsenko, V. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.03.2023
Springer
Springer Nature B.V
Subjects
Analysis
Boron nitride
Charge transfer
Classical and Quantum Gravitation
Dielectric films
Divacancies
Electronic Properties of Solid
Electronic structure
Elementary Particles
Insulators
Particle and Nuclear Physics
Phonons
Physics
Physics and Astronomy
Quantum Field Theory
Relativity Theory
Solid State Physics
Thin films
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Summary:A mechanism of transverse charge transfer through hexagonal boron nitride (h-BN) in a MIS structure has been studied. Experimental data for charge transfer have been analyzed in terms of different models of charge transfer in insulators. It has been shown that charge transfer in h-BN is described by the model of phonon-assisted tunneling between neutral traps. The thermal and optical energies of phonon-coupled traps in h-BN have been determined. Based on charge transfer measurements, XPS spectra, and the ab initio electronic structure of intrinsic defects in h-BN it has been found that boron–nitrogen divacancies are most probably responsible for charge transfer in h-BN and transfer is provided by electrons.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776123030135