A rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulation

• Published in: IEEE transactions on electron devices Vol. 34; no. 2; pp. 392 - 399
• Main Authors: Bandyopadhyay, S., Klausmeier-Brown, M.E., Maziar, C.M., Datta, S., Lundstrom, M.S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.1987; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Miscellaneous; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transport process; Monte Carlo method; Charge carrier scattering; Simulation; Solid state device; Hot carrier; Unsteady state; Models
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1987.22935

Hybrid techniques for coupling Monte Carlo and drift-diffusion models for device simulation show excellent promise because of their computational efficiency. We present a rigorous technique for coupling the two models that retains the computational efficiency of the drift-diffusion scheme and the rigor of a Monte Carlo treatment. From regional Monte Carlo simulation, the position'dependent mobility, diffusion coefficient, and the energy-gradient field are evaluated for specific regions of common device structures where transient hot-electron effects are important, These are used in a new technique to couple Monte Carlo and drift-diffusion models for computationally efficient global device simulation.