SEE characterization of vertical DMOSFETs: an updated test protocol

The test protocols for power MOSFETs used in the manufacturer's specification sheets are inadequate in that they do not represent a realistic worst-case condition. In addition, the applicable single-event effects (SEE) test methods and guidelines do not provide sufficient details to the user as...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 50; no. 6; pp. 2341 - 2351
Main Authors Titus, J.L., Wheatley, C.F.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Atomic layer deposition
Cranes
Guidelines
Life testing
Manufacturing
Mathematical models
MOSFETs
Nuclear power generation
Placing
Predictive models
Protocols
Semiconductor process modeling
Specifications
Voltage
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Summary:The test protocols for power MOSFETs used in the manufacturer's specification sheets are inadequate in that they do not represent a realistic worst-case condition. In addition, the applicable single-event effects (SEE) test methods and guidelines do not provide sufficient details to the user as to what conditions should be used, placing an undue burden on them. This paper addresses several of these deficiencies and others. We present a new test protocol; we suggest a new approach to describe the SEE response; and we provide a model to predict critical ion energies that should produce a worst-case response.
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ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2003.820733