Facet degradation of GaN heterostructure laser diodes
We investigated the degradation of cleaved facets of (Al,In)GaN laser diodes in different atmospheres. We found that operation in water-free atmospheres with sufficient oxygen shows a slow degradation. Operation in atmospheres with water vapor causes a fast degradation and an oxidation on the facet....
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Published in | Journal of applied physics Vol. 97; no. 12; pp. 123102 - 123102-8 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
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American Institute of Physics
15.06.2005
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Abstract | We investigated the degradation of cleaved facets of (Al,In)GaN laser diodes in different atmospheres. We found that operation in water-free atmospheres with sufficient oxygen shows a slow degradation. Operation in atmospheres with water vapor causes a fast degradation and an oxidation on the facet. This deposition is a permanent damage to the laser diode. If the laser diode is operated in pure nitrogen, we find a thick deposition on the facet, which shows high absorption. This deposition can be removed by either high optical output powers or by operation in atmospheres with sufficient oxygen. We also explain the influence of these coatings to the degradation behavior and see these coatings as the reason for unstable kinks in the
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AbstractList | We investigated the degradation of cleaved facets of (Al,In)GaN laser diodes in different atmospheres. We found that operation in water-free atmospheres with sufficient oxygen shows a slow degradation. Operation in atmospheres with water vapor causes a fast degradation and an oxidation on the facet. This deposition is a permanent damage to the laser diode. If the laser diode is operated in pure nitrogen, we find a thick deposition on the facet, which shows high absorption. This deposition can be removed by either high optical output powers or by operation in atmospheres with sufficient oxygen. We also explain the influence of these coatings to the degradation behavior and see these coatings as the reason for unstable kinks in the L–I characteristics during operation. We investigated the degradation of cleaved facets of (Al,In)GaN laser diodes in different atmospheres. We found that operation in water-free atmospheres with sufficient oxygen shows a slow degradation. Operation in atmospheres with water vapor causes a fast degradation and an oxidation on the facet. This deposition is a permanent damage to the laser diode. If the laser diode is operated in pure nitrogen, we find a thick deposition on the facet, which shows high absorption. This deposition can be removed by either high optical output powers or by operation in atmospheres with sufficient oxygen. We also explain the influence of these coatings to the degradation behavior and see these coatings as the reason for unstable kinks in the L - I characteristics during operation. |
Author | Kümmler, Volker Leber, Andreas Miler, Andreas Härle, Volker Lell, Alfred Schwarz, Ulrich T. Schoedl, Thomas Furitsch, Michael |
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References | Bader, S. 2000; 180 Itaya, K.; Ishikawa, M.; Okuda, H.; Watanabe, Y.; Nitta, K. 1988; 53 Pavesi, M.; Manfredi, M. 2004; 84 Kümmler, V.; Lell, A.; Härle, V.; Schwarz, U.; Schoedl, T.; Wegscheider, W. 2004; 84 Schoedl, T.; Schwarz, U.; Miller, S.; Furitsch, M.; Leber, A.; Lell, A.; Härle, V. 2004; 201 Makino, T. 1996; 32 Fukuda, M.; Okayasu, M.; Takeshita, T.; Wada, M. 1992; 8 Goto, S.; Ohta, M.; Yabuki, Y.; Hoshina, Y.; Naganuma, K.; Tamamura, K.; Hashizu, T.; Ikeda, M. 2003; 200 Manyakin, F.; Kovalev, A.; Yunovich, A. 1998; 3 Kümmler, V. 2002; 194 Fukuda, M.; Takahei, K. 1985; 57 Okayasu, M.; Fukuda, M.; Takeshita, T.; Uehara, S.; Kurumada, K. 1991; 69 Eliseev, P. 1996; 20 Tomiya, S.; Goto, S.; Takeya, M.; Ikeda, M. 2003; 200 Schwarz, U.; Schoedl, T.; Kümmler, V.; Lell, A.; Härle, V. 2004; 798 Henry, C.; Petroff, P.; Logan, R.; Merritt, F. 1979; 50 Schwarz, U.; Wegscheider, W.; Lell, A.; Härle, V. 2004; 5365 (2023073022571421900_c7) 2004; 84 (2023073022571421900_c19) 1993 (2023073022571421900_c11) 2004; 5365 (2023073022571421900_c5) 1991 (2023073022571421900_c3) 2003; 200 (2023073022571421900_c9) 2000; 180 (2023073022571421900_c10) 2002; 194 (2023073022571421900_c17) 1992; 8 (2023073022571421900_c2) 1998; 3 (2023073022571421900_c6) 1996; 20 (2023073022571421900_c20) 1996; 32 (2023073022571421900_c15) 2004; 201 (2023073022571421900_c12) 1979; 50 (2023073022571421900_c14) 2004; 798 (2023073022571421900_c8) 1988; 53 (2023073022571421900_c13) 2003; 200 (2023073022571421900_c4) 1991; 69 (2023073022571421900_c18) 1995 (2023073022571421900_c1) 2004; 84 (2023073022571421900_c16) 1985; 57 |
References_xml | – volume: 50 start-page: 3721 year: 1979 publication-title: J. Appl. Phys. doi: 10.1063/1.326278 contributor: fullname: Henry, C.; Petroff, P.; Logan, R.; Merritt, F. – volume: 57 start-page: 129 year: 1985 publication-title: J. Appl. Phys. doi: 10.1063/1.335375 contributor: fullname: Fukuda, M.; Takahei, K. – volume: 201 start-page: 12 year: 2004 publication-title: Phys. Status Solidi A contributor: fullname: Schoedl, T.; Schwarz, U.; Miller, S.; Furitsch, M.; Leber, A.; Lell, A.; Härle, V. – volume: 194 start-page: 419 year: 2002 publication-title: Phys. Status Solidi A doi: 10.1002/1521-396X(200212)194:2<419::AID-PSSA419>3.0.CO;2-B contributor: fullname: Kümmler, V. – volume: 180 start-page: 177 year: 2000 publication-title: Phys. Status Solidi A doi: 10.1002/1521-396X(200007)180:1<177::AID-PSSA177>3.0.CO;2-F contributor: fullname: Bader, S. – volume: 84 start-page: 2989 year: 2004 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1704861 contributor: fullname: Kümmler, V.; Lell, A.; Härle, V.; Schwarz, U.; Schoedl, T.; Wegscheider, W. – volume: 20 start-page: 1 year: 1996 publication-title: Prog. Quantum Electron. doi: 10.1016/0079-6727(95)00002-X contributor: fullname: Eliseev, P. – volume: 200 start-page: 122 year: 2003 publication-title: Phys. Status Solidi A contributor: fullname: Goto, S.; Ohta, M.; Yabuki, Y.; Hoshina, Y.; Naganuma, K.; Tamamura, K.; Hashizu, T.; Ikeda, M. – volume: 69 start-page: 8346 year: 1991 publication-title: J. Appl. Phys. doi: 10.1063/1.347396 contributor: fullname: Okayasu, M.; Fukuda, M.; Takeshita, T.; Uehara, S.; Kurumada, K. – volume: 798 start-page: Y11.10.1 year: 2004 publication-title: Mater. Res. Soc. Symp. Proc. contributor: fullname: Schwarz, U.; Schoedl, T.; Kümmler, V.; Lell, A.; Härle, V. – volume: 32 start-page: 493 year: 1996 publication-title: IEEE J. Quantum Electron. doi: 10.1109/3.485401 contributor: fullname: Makino, T. – volume: 5365 start-page: 267 year: 2004 publication-title: Proc. SPIE contributor: fullname: Schwarz, U.; Wegscheider, W.; Lell, A.; Härle, V. – volume: 84 start-page: 3403 year: 2004 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1734682 contributor: fullname: Pavesi, M.; Manfredi, M. – volume: 3 start-page: 53 year: 1998 publication-title: MRS Internet J. Nitride Semicond. Res. contributor: fullname: Manyakin, F.; Kovalev, A.; Yunovich, A. – volume: 8 start-page: 283 year: 1992 publication-title: Qual. Reliab. Eng. Int. contributor: fullname: Fukuda, M.; Okayasu, M.; Takeshita, T.; Wada, M. – volume: 200 start-page: 139 year: 2003 publication-title: Phys. Status Solidi A contributor: fullname: Tomiya, S.; Goto, S.; Takeya, M.; Ikeda, M. – volume: 53 start-page: 1363 year: 1988 publication-title: Appl. Phys. Lett. doi: 10.1063/1.100403 contributor: fullname: Itaya, K.; Ishikawa, M.; Okuda, H.; Watanabe, Y.; Nitta, K. – volume: 200 start-page: 122 year: 2003 ident: 2023073022571421900_c13 publication-title: Phys. Status Solidi A doi: 10.1002/pssa.200303325 – volume: 84 start-page: 3403 year: 2004 ident: 2023073022571421900_c1 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1734682 – volume: 32 start-page: 493 year: 1996 ident: 2023073022571421900_c20 publication-title: IEEE J. Quantum Electron. doi: 10.1109/3.485401 – volume: 8 start-page: 283 year: 1992 ident: 2023073022571421900_c17 publication-title: Qual. Reliab. Eng. Int. doi: 10.1002/qre.4680080318 – volume: 50 start-page: 3721 year: 1979 ident: 2023073022571421900_c12 publication-title: J. Appl. Phys. doi: 10.1063/1.326278 – volume: 69 start-page: 8346 year: 1991 ident: 2023073022571421900_c4 publication-title: J. Appl. Phys. doi: 10.1063/1.347396 – volume-title: Diode Lasers and Photonic Integrated Circuits year: 1995 ident: 2023073022571421900_c18 – volume-title: Semiconductor Lasers year: 1993 ident: 2023073022571421900_c19 – volume: 798 start-page: Y11 year: 2004 ident: 2023073022571421900_c14 publication-title: Mater. Res. Soc. Symp. Proc. – volume: 3 start-page: 53 year: 1998 ident: 2023073022571421900_c2 publication-title: MRS Internet J. Nitride Semicond. Res. doi: 10.1557/S1092578300001253 – volume: 194 start-page: 419 year: 2002 ident: 2023073022571421900_c10 publication-title: Phys. Status Solidi A doi: 10.1002/1521-396X(200212)194:2<419::AID-PSSA419>3.0.CO;2-B – volume: 57 start-page: 129 year: 1985 ident: 2023073022571421900_c16 publication-title: J. Appl. Phys. doi: 10.1063/1.335375 – volume: 53 start-page: 1363 year: 1988 ident: 2023073022571421900_c8 publication-title: Appl. Phys. Lett. doi: 10.1063/1.100403 – volume: 180 start-page: 177 year: 2000 ident: 2023073022571421900_c9 publication-title: Phys. Status Solidi A doi: 10.1002/1521-396X(200007)180:1<177::AID-PSSA177>3.0.CO;2-F – volume: 20 start-page: 1 year: 1996 ident: 2023073022571421900_c6 publication-title: Prog. Quantum Electron. doi: 10.1016/0079-6727(95)00002-X – volume: 201 start-page: 12 year: 2004 ident: 2023073022571421900_c15 publication-title: Phys. Status Solidi A – volume: 200 start-page: 139 year: 2003 ident: 2023073022571421900_c3 publication-title: Phys. Status Solidi A doi: 10.1002/pssa.200303322 – volume-title: Reliability and Degradation of Semiconductor Lasers and LEDs year: 1991 ident: 2023073022571421900_c5 – volume: 84 start-page: 2989 year: 2004 ident: 2023073022571421900_c7 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1704861 – volume: 5365 start-page: 267 year: 2004 ident: 2023073022571421900_c11 publication-title: Proc. SPIE doi: 10.1117/12.529087 |
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