Facet degradation of GaN heterostructure laser diodes

We investigated the degradation of cleaved facets of (Al,In)GaN laser diodes in different atmospheres. We found that operation in water-free atmospheres with sufficient oxygen shows a slow degradation. Operation in atmospheres with water vapor causes a fast degradation and an oxidation on the facet....

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Published inJournal of applied physics Vol. 97; no. 12; pp. 123102 - 123102-8
Main Authors Schoedl, Thomas, Schwarz, Ulrich T., Kümmler, Volker, Furitsch, Michael, Leber, Andreas, Miler, Andreas, Lell, Alfred, Härle, Volker
Format Journal Article
LanguageEnglish
Published American Institute of Physics 15.06.2005
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Summary:We investigated the degradation of cleaved facets of (Al,In)GaN laser diodes in different atmospheres. We found that operation in water-free atmospheres with sufficient oxygen shows a slow degradation. Operation in atmospheres with water vapor causes a fast degradation and an oxidation on the facet. This deposition is a permanent damage to the laser diode. If the laser diode is operated in pure nitrogen, we find a thick deposition on the facet, which shows high absorption. This deposition can be removed by either high optical output powers or by operation in atmospheres with sufficient oxygen. We also explain the influence of these coatings to the degradation behavior and see these coatings as the reason for unstable kinks in the L - I characteristics during operation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1929851