Efficient numerical simulation of the high-frequency MOS capacitance

• Published in: IEEE transactions on electron devices Vol. 34; no. 10; pp. 2214 - 2216
• Main Authors: Watt, J.T., Plummer, J.D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.10.1987; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Interfaces; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Voltage current curve; Digital simulation; Space charge; MOS structure; High frequency; MOS capacity; Inversion layer

An enhancement of the MOSCAP C-V simulation program that permits efficient evaluation of the high-frequency MOS capacitance, including inversion-charge-redistribution effects, is presented. The measured C-V characteristics of a buried-channel MOS structure have been modeled successfully using the mo...