Efficient numerical simulation of the high-frequency MOS capacitance

An enhancement of the MOSCAP C-V simulation program that permits efficient evaluation of the high-frequency MOS capacitance, including inversion-charge-redistribution effects, is presented. The measured C-V characteristics of a buried-channel MOS structure have been modeled successfully using the mo...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 34; no. 10; pp. 2214 - 2216
Main Authors Watt, J.T., Plummer, J.D.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.10.1987
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Voltage current curve
Digital simulation
Space charge
MOS structure
High frequency
MOS capacity
Inversion layer
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Summary:An enhancement of the MOSCAP C-V simulation program that permits efficient evaluation of the high-frequency MOS capacitance, including inversion-charge-redistribution effects, is presented. The measured C-V characteristics of a buried-channel MOS structure have been modeled successfully using the modified MOSCAP program. It has been found that the neglect of inversion-charge rearrangement in response to the high-frequency ac signal leads to a significant underestimation of the semiconductor space-charge capacitance in strong inversion for the buried-channel device.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.23220