Conductance deep-level transient spectroscopic study of anomalous hole trap in GaAs MESFETs

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Bibliographic Details
Published inSemiconductor science and technology Vol. 13; no. 10; pp. 1094 - 1099
Main Authors Balakrishnan, V R, Kumar, Vikram, Ghosh, Subhasis
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.10.1998
Institute of Physics
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Thermal characteristic
Interface state
Band structure
Binary compound
Temperature effect
Current voltage characteristics
Leakage currents
III-V compound
Gallium Arsenides
Charge carrier trapping
MESFET devices
Electrical conductance
Deep level transient spectroscopy
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/13/10/007