Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications

A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 000) and high maximum drive level (P= 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of a silicon-on-insulato...

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Bibliographic Details
Published inIEEE electron device letters Vol. 25; no. 4; pp. 173 - 175
Main Authors Kaajakari, V., Mattila, T., Oja, A., Kiihamaki, J., Seppa, H.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Acoustic noise
Devices
Etching
Hysteresis
Microcavities
Micromechanical devices
Oscillators
Phase noise
Q factor
Quality factor
Reactive ion etching
Resonators
Scanning electron microscopy
Shape
Silicon
Silicon on insulator technology
Single crystals
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Summary:A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 000) and high maximum drive level (P= 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of a silicon-on-insulator wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of -138 dBc/Hz at 1 kHz offset from the carrier.
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.824840