Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

• Published in: Technical physics letters Vol. 47; no. 10; pp. 753 - 756
• Main Authors: Cherkashin, N. A., Sakharov, A. V., Nikolaev, A. E., Lundin, V. V., Usov, S. O., Ustinov, V. M., Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V., Tsatsul’nikov, A. F.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.10.2021; Springer Nature B.V; MAIK Nauka/Interperiodica (МАИК Наука/Интерпериодика)
• Subjects: Buffer layers; Classical and Continuum Physics; Condensed Matter; Design optimization; Dislocation density; Epitaxial growth; Heterostructures; Materials Science; Optical properties; Organometallic compounds; Physics; Physics and Astronomy; Silicon compounds; Silicon substrates; III–N heterostructure; gallium nitride; silicon; silicon carbide; gas-phase epitaxy from organometallic compounds
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S106378502108006X

Light-emitting III–N heterostructures are grown by gas-phase epitaxy from organometallic compounds on SiC/Si (111) templates (substrates) formed using matched atomic substitution. Investigations of the optical and structural properties of heterostructures are carried out in order to reveal the formation of defects in the structures. It is shown that such heterostructures exhibit specific features of the growth of the (Al,Ga)N buffer layer associated with the presence of pores in Si under the SiC/Si interface. The use of an optimized buffer layer design makes it possible to significantly reduce the dislocation density and form an active region with good structural quality.