Electrical and optical properties of transition metal dichalcogenides on talc dielectrics

• Published in: Nanoscale Vol. 13; no. 37; pp. 15853 - 15858
• Main Authors: Nutting, Darren, Prando, Gabriela A, Severijnen, Marion, Barcelos, Ingrid D, Guo, Shi, Christianen, Peter C. M, Zeitler, Uli, Galvão Gobato, Yara, Withers, Freddie
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 01.10.2021
• Subjects: Boron nitride; Chalcogenides; Dielectric strength; Heterostructures; Leakage current; Monolayers; Optical properties; Photoluminescence; Semiconductor devices; Substrates; Talc; Transistors; Transition metal compounds
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/d1nr04723j

Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses. We also show narrow photoluminescence linewidths down to 10 meV for different TMDC monolayers on talc which highlights that talc is a promising material for future van der Waals devices. We find significant optical and electronic enhancements of transition metal dichalcogenides on talc dielectrics compared to SiO 2 substrates, making talc dielectrics promising for future van der Waals optoelectronics.