Nonvolatile Memory Organic Light‐Emitting Transistors

• Published in: Advanced materials (Weinheim) Vol. 35; no. 48; pp. e2307703 - n/a
• Main Authors: Xu, Meili, Zhao, Changbin, Meng, Zhimin, Yan, Hao, Chen, Hongming, Jiang, Zhixiang, Jiang, Zhuonan, Chen, Hong, Meng, Lingqiang, Hui, Wei, Su, Zhenhuang, Wang, Yueyue, Wang, Zhenhui, Wang, Jianing, Gao, Yuanhong, He, Yaowu, Meng, Hong
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.11.2023
• Subjects: Active matrix displays; Circuits; Density; Ferroelectric materials; ferroelectric polymers; Ferroelectricity; interface optimization; Light; Light emission; Moore's law; nonvolatile memories; Organic light emitting diodes; organic light‐emitting transistors; Pixels; Switching; Transistors
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.202307703

In the field of active‐matrix organic light emitting display (AMOLED), large‐size and ultra‐high‐definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light‐emitting transistor (Fe‐OLET) device which integrates the switching capability, light‐emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe‐OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof‐of‐concept device optimized through interfacial modification approach exhibits 20 times improved field‐effect mobility and five times increased luminance. The integration of nonvolatile memory, switching and light‐emitting capabilities within Fe‐OLET provides a promising internal‐storage‐driving paradigm, thus creating a new pathway for deploying storage capacitor‐free circuitry to improve the pixel aperture ratio and the integration density of circuits toward the on‐chip advanced display applications. A new concept of nonvolatile memory organic light‐emitting transistor (OLET) achieving by ferroelectric polymer is proposed for improving the integration density of pixel circuits of organic display. The performances of proposed device are greatly improved through interfacial modification approach. The integration of nonvolatile memory, switching and light‐emitting functions within the ferroelectric OLET opens a different avenue toward on‐chip advanced display technologies.