Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers

• Published in: IEEE photonics technology letters Vol. 16; no. 4; pp. 963 - 965
• Main Authors: Louderback, D.A., Fish, M.A., Klem, J.F., Serkland, D.K., Choquette, K.D., Pickrell, G.W., Stone, R.V., Guilfoyle, P.S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Absorption; Adjustment; Apertures; Compatibility; Devices; Distributed Bragg reflectors; Emission; Gallium arsenide; Optical surface waves; Power generation; Substrates; Surface emitting lasers; Surface waves; Threshold currents; Vertical cavity surface emission lasers; Vertical cavity surface emitting lasers; Wavelengths
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2004.824614

We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of /spl sim/0.75 mW, with threshold currents of 1.3 mA, were achieved with /spl sim/3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.