An organic dielectric filler polyethylene glycol-polyaniline block copolymer with low-density used in PVDF-based composites
In order to meet the ever-increasing demand for lightweight and flexibility with the development of aeronautics, astronautics and wearable technology, dielectric ceramics are inappropriate for the polymer-based dielectric materials due to their high density. An organic semiconductor material polyeth...
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Published in | Composites science and technology Vol. 221; p. 109300 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Barking
Elsevier Ltd
12.04.2022
Elsevier BV |
Subjects | |
Online Access | Get full text |
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Summary: | In order to meet the ever-increasing demand for lightweight and flexibility with the development of aeronautics, astronautics and wearable technology, dielectric ceramics are inappropriate for the polymer-based dielectric materials due to their high density. An organic semiconductor material polyethylene glycol-polyaniline multi-alternating block (more than triblock) copolymer (with a low density ∼ 0.9 g/cm3) was designed. This polymer had a good solubility in polar solvents (e.g. DMF and DMSO) which could provide it with a good processing performance and a good dispersion in PVDF matrix. Its alternating block structure had a special role in the charge transport of PANI segments, providing composites with high dielectric constant and overcoming the poor breakdown strength problem of conductive filler-based dielectric composites, even better than BaTiO3. The breakdown strength of PEG-PANI/PVDF composite was 10.74 kV/mm and the dielectric constant was 86.64 (100 Hz) at 20 vol%, better than BaTiO3/PVDF (9.89 kV/mm and 45.23).
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•An organic semiconductor with a low density is proposed.•The copolymer PEG-PANI has a good solubility in polar solvents.•The PEG-PANI has a good dispersion in PVDF matrix.•The PEG-PANI can significantly increase the dielectric constant of PVDF and keep a great breakdown strength. |
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ISSN: | 0266-3538 1879-1050 |
DOI: | 10.1016/j.compscitech.2022.109300 |