Low-voltage high-speed travelling wave InGaAsP-InP phase modulator

A high-speed low-drive-voltage travelling wave electrodes InGaAsP-InP phase modulator operated at 1.55 μm is demonstrated. The modulator is fabricated using a multiple quantum-well optical waveguide with an on chip integrated termination resistor. A small signal bandwidth of 35 GHz and a V/spl pi/ o...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 16; no. 8; pp. 1831 - 1833
Main Authors Zhang, L., Sinsky, J., Van Thourhout, D., Sauer, N., Stulz, L., Adamiecki, A., Chandrasekhar, S.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bandwidth
Chip formation
Electrodes
High speed
High speed optical techniques
Modulators
Optical modulation
Optical signal processing
Optical transmitters
Optical waveguides
Phase modulation
Quantum well devices
Quantum wells
Resistors
Traveling waves
Ultrafast optics
Voltage
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Summary:A high-speed low-drive-voltage travelling wave electrodes InGaAsP-InP phase modulator operated at 1.55 μm is demonstrated. The modulator is fabricated using a multiple quantum-well optical waveguide with an on chip integrated termination resistor. A small signal bandwidth of 35 GHz and a V/spl pi/ of 1.8 V has been demonstrated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.831291