Charge transport in chemically grown manganite based heterostructure

• Published in: Materials chemistry and physics Vol. 224; pp. 229 - 237
• Main Authors: Sagapariya, Khushal, Gadani, Keval, Rathod, K.N., Joshi, Zalak, Boricha, Hetal, Dhruv, Davit, Keshvani, M.J., Rajyaguru, Bhargav, Kansara, S.B., Joshi, A.D., Asokan, K., Solanki, P.S., Shah, N.A.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 15.02.2019; Elsevier BV
• Subjects: Charge injection; Charge transport; Chemical solution deposition; Crystallography; Current voltage characteristics; Depletion; Electroresistance; Heterostructure; Heterostructures; Manganite; Organic chemistry; Substrates; Transport phenomena; Zinc oxide; Heterostructure; Chemical solution deposition; Manganite; Electroresistance
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/j.matchemphys.2018.12.020

In this communication, we report the results of the structural and transport studies performed on ZnO/La0.7Ca0.3MnO3/LaAlO3 (ZnO//LAO) heterostructure grown using simple, low cost, vacuum free and environment friendly chemical solution deposition (CSD) method. ZnO is found to be polycrystalline while LCMO film orientations suggest its single crystalline growth, parallel with the crystallographic orientations of LAO substrate. Double peak transition behavior, observed in the R – T, has been discussed on the basis of phase coexistence scenario. Charge transport behavior and charge conduction mechanisms have been investigated by performing current–voltage (I–V) characteristics at different temperatures. Various electronic and thermal processes have been proposed as sources of backward diode like characteristics observed across ZnO/LCMO interface. Complex variations in electroresistance (ER) have been discussed on the basis of charge injection, depletion region modifications, tunneling, breakdown and thermal processes. [Display omitted] •Single crystalline parallel growth of LCMO film on single crystalline LAO substrate.•Double peak transition nature has been correlated with phase coexistence scenario.•ZDE and Mott type VRH control the charge transport across ZnO/LCMO interface.•Tunneling, thermal and leakage processes are sources for backward diode character.•Complex electroresistance behavior across interface has been discussed in–depth.