Influence of surface preparation on atomic layer deposition of Pt films

We report Pt deposition on a Si substrate by means of atomic layer deposition（ALD） using（methylcyclopentadienyl） trimethylplatinum（CH_3C_5H_4Pt（CH_3）_3） and O_2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on P...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 8; pp. 32 - 36
Main Author 葛亮 胡成 朱志炜 张卫 吴东平 张世理
Format Journal Article
LanguageEnglish
Published 01.08.2012
Subjects
ALD
Deposition
Electrical engineering, electronics and photonics
Electronics
Elektronik
Elektroteknik, elektronik och fotonik
Engineering Science with specialization in Electronics
Hafnium
HF处理
Homogeneity
Oxides
Platinum
Pt薄膜
Semiconductors
Silicon substrates
Si衬底
Surface preparation
TECHNOLOGY
TEKNIKVETENSKAP
Teknisk fysik med inriktning mot elektronik
原子层沉积
氧化物
甲基环戊二烯基
表面制备
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ISSN1674-4926
DOI10.1088/1674-4926/33/8/083003

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Summary:We report Pt deposition on a Si substrate by means of atomic layer deposition（ALD） using（methylcyclopentadienyl） trimethylplatinum（CH_3C_5H_4Pt（CH_3）_3） and O_2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD.A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate.An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing.A plausible explanation to the observed difference of Pt-ALD is discussed.
Bibliography:11-5781/TN
Pt; atomic layer deposition; surface treatment; interfacial oxide layer
We report Pt deposition on a Si substrate by means of atomic layer deposition（ALD） using（methylcyclopentadienyl） trimethylplatinum（CH_3C_5H_4Pt（CH_3）_3） and O_2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD.A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate.An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing.A plausible explanation to the observed difference of Pt-ALD is discussed.
Ge Liang, Hu Cheng, Zhu Zhiwei, Zhang Wei, Wu Dongping, Zhang Shili 1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China 2 Solid-State Electronics, the Angstrom Laboratory, Uppsala University, Box 534, 75121 Uppsala, Sweden
ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/8/083003