High-saturation-current InP-InGaAs photodiode with partially depleted absorber

A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio-frequency bandwidths of 1 and 10 GHz...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 15; no. 9; pp. 1276 - 1278
Main Authors Xiaowei Li, Ning Li, Xiaoguang Zheng, Demiguel, S., Campbell, J.C., Tulchinsky, D.A., Williams, K.J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.09.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bandwidth
Compressing
Compression tests
Depletion
Dissipation
Electric power generation
Indium gallium arsenide
Indium gallium arsenides
Indium phosphide
Optical refraction
Optical saturation
Photoconductivity
Photocurrent
Photodiodes
PIN photodiodes
Power generation
Thermal conductivity
Thermal management
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Summary:A high-saturation-current InGaAs photodiode (PD) with a partially depleted absorber is demonstrated. Optical responsivity of 0.58 A/W and over 1.1 W of dissipated electrical power is achieved. Small signal compression current of 110 and 57 mA is measured at radio-frequency bandwidths of 1 and 10 GHz, respectively. This continuous photocurrent is believed to be the highest reported value for a p-i-n InGaAs PD at these bandwidths.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2003.816118