Investigation of oxygen and argon plasma treatment on Mg-doped InZnO thin film transistors

Mg-doped InZnO (MIZO) films were prepared by sol–gel method, and bottom-gate structured thin film transistors (TFTs) were prepared by using the MIZO films. Oxygen and argon (Ar) plasma treatments were carried out on the film and TFTs. The X-ray photoelectron spectroscopy (XPS) results show that both...

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Published inApplied physics. A, Materials science & processing Vol. 122; no. 11; pp. 1 - 8
Main Authors Hu, Chun-Feng, Feng, Ji-Yu, Zhou, Jin, Qu, Xin-Ping
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer Berlin Heidelberg 01.11.2016
Springer Nature B.V
Subjects
Applied physics
Argon plasma
Characterization and Evaluation of Materials
Condensed Matter Physics
Etching
Machines
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Oxygen
Physics
Physics and Astronomy
Plasma (physics)
Processes
Semiconductor devices
Surfaces and Interfaces
Thin film transistors
Thin Films
X ray photoelectron spectroscopy
X-rays
Oxygen Plasma Treatment
Plasma Treatment
Carrier Concentration
Oxygen Vacancy
Thin Film Transistor
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Summary:Mg-doped InZnO (MIZO) films were prepared by sol–gel method, and bottom-gate structured thin film transistors (TFTs) were prepared by using the MIZO films. Oxygen and argon (Ar) plasma treatments were carried out on the film and TFTs. The X-ray photoelectron spectroscopy (XPS) results show that both Ar and oxygen etching can increase the oxygen deficiencies, which effectively increase the content of carrier concentration in MIZO films. After both kinds of plasma treatment, the field effect mobility of the MIZO TFTs is greatly improved and the on/off current ratio increases two orders of magnitude.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-016-0475-z