Sputter deposition conditions and penetration depth in NbN thin films

• Published in: IEEE transactions on applied superconductivity Vol. 13; no. 2; pp. 3288 - 3291
• Main Authors: Hu, R., Kerber, G.L., Luine, J., Ladizinsky, E., Bulman, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.06.2003; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity; Electrical resistance measurement; Electronics; Exact sciences and technology; High-tc films; Microelectronic fabrication (materials and surfaces technology); Niobium; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor films; Sputtering; SQUIDs; Substrates; Superconducting films; Superconducting films and low-dimensional structures; Superconducting transition temperature; Superconductivity; X-ray diffraction; Buffer layer; Resonator; Resistivity; X ray diffraction; Sputter coating; Thin film; Superconducting films; penetration depth; Superconducting quantum interferometer device; TiN; Deposit formation; NbN; Sputter deposition; Comparative study; Parallel plate; Superconducting transition temperature
• ISSN: 1051-8223; 1558-2515
• DOI: 10.1109/TASC.2003.812227

NbN films have been reactively sputter deposited from a 15.24 cm Nb target using a variety of deposition conditions. Film penetration depth has been measured using Taber's parallel plate resonator technique. These measurements have been compared with penetration depth measurements obtained from SQUID measurements. Penetration depth results have also been correlated with film superconducting transition temperature, resistivity, resistance ratio, and x-ray diffraction patterns. The films have been deposited over a variety of substrates and buffer layers including oxidized Si, sapphire, and a variety of metal and metal nitride "seed" layers.